• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention dissolves and correlates the chain resistance component and the Kelvin resistance component in order to analyze the chain resistance defect, thereby enabling the cause analysis and the cause tracking through the contact resistance analysis in the Kelvin test pattern in the contact chain. The present invention relates to a method for measuring contact resistance of a semiconductor device capable of correctly measuring a component resistance component in a semiconductor device. The method for measuring contact resistance of a semiconductor device in which a chain resistance component is measured using a Kelvin test pattern, If the contact resistance is open, it is calculated by dividing the voltage drop by the ground current. If the contact resistance is not open, it is calculated by dividing the voltage drop by the forcing current. Measured with the current value applied when measuring resistance It shall be.
    公开号:KR20000027812A
    申请号:KR1019980045842
    申请日:1998-10-29
    公开日:2000-05-15
    发明作者:임재은；홍병섭
    申请人:김영환；현대전자산업 주식회사；
    IPC主号:
    专利说明:

    Method of measuring contact resistance of semiconductor device
    The present invention relates to a method of measuring contact resistance of a semiconductor device, and more particularly, in order to analyze a chain resistance defect, the resistance of a contact in a Kelvin test pattern is related to a defect of resistance in a contact chain by decomposing and correlating the chain resistance component and the Kelvin resistance component. The present invention relates to a method of measuring contact resistance of a semiconductor device that enables cause analysis and traceability through analysis, and enables measurement of component resistance components in a Kelvin test pattern.
    As semiconductor devices become increasingly integrated, not only the width of wirings on semiconductor substrates but also the gaps between wirings and wirings are remarkably reduced. Furthermore, as the integration between wirings and wirings becomes narrower, contact holes are formed. The problem has been raised, and as the high density increases, the number of metal layers is increased while forming a multilayer structure, and the importance of via contact formation for securing a space for connecting the metal layers is increasing.
    In addition to the fourth-generation 64MDRAM semiconductor device using tungsten polyside as a gate electrode and a bit line, a problem of increasing contact resistance may occur in a next-generation device using a new material. At this time, the analysis of the chain resistance component is essential. Through this, the cause of the contact resistance can be analyzed to establish the contact resistance.
    In practice, hundreds of contacts are used in semiconductor devices, and in order to monitor them, chain resistances are measured to measure resistance in hundreds of contact assemblies. Kelvin resistance is measured in the Kelvin measurement pattern to analyze the components of the resistor.
    However, in the related art, the chain resistance and the measured Kelvin resistance are measured at a specific voltage and current, and are simply compared and evaluated to have the following problems.
    First, Kelvin resistance is composed of resistance filling the contact part and resistance of contact boundary part, and the sheet resistance component of upper and lower conductive layers of the contact is missing among the components of the chain resistance. There is a problem that it is insufficient.
    Second, how to measure the chain resistance component in the Kelvin test pattern is not a clear guideline for this method. Particularly, the voltage across the resistor is divided by the force current, which has a problem in that the accurate chain resistance cannot be measured because the resistance value is smaller than the actual value when the contact is broken and opened.
    Third, there is no guideline for the applied current to measure each component. Therefore, when the resistance of the conductive layer is the same but the measurement conditions are different, there is a problem that the Kelvin resistance value does not coincide with the chain resistance value per chain unit.
    In other words, if the resistance contact characteristic is displayed, the Kelvin resistance value can be read regardless of the applied current. However, if the resistive contact characteristic is shown, the resistance value changes according to the applied current. If this is not obtained, there is a problem that the Kelvin resistance value does not represent the chain resistance value and only causes confusion in analyzing and analyzing the chain resistance value.
    The present invention has been made to solve the above problems, and an object of the present invention is to decompose and correlate the chain resistance component and the Kelvin resistance component to analyze the chain resistance defects, so that the failure of the resistance in the contact chain in the Kelvin test pattern. The purpose of the present invention is to provide a method of measuring the contact resistance of a semiconductor device which enables the cause analysis and the cause tracking through the contact resistance analysis, and the component resistance component of the Kelvin test pattern.
    1 is a view showing a Kelvin test pattern for measuring contact resistance of a semiconductor device.
    FIG. 2 is an equivalent circuit diagram of the Kelvin test pattern of FIG.
    3 is a view showing a chain resistance measurement pattern for measuring contact resistance of a semiconductor device.
    4 is an equivalent circuit diagram of the chain resistance measurement pattern of FIG.
    5 is a graph showing a current-voltage curve of a normal chain resistance.
    6 is a graph showing current-voltage curves measured by Kelvin patterns on wafers under the same conditions.
    -Explanation of symbols for the main parts of the drawings-
    10: lower conductive layer 20: upper conductive layer
    30: contact
    According to the present invention for realizing the above object, in the contact resistance measurement method of a semiconductor device for measuring a chain resistance component using a Kelvin test pattern, the voltage drop value when the contact resistance region is opened when the Kelvin resistance is calculated. Is calculated by dividing by the ground current, and when the contact resistance is not open, the voltage drop is divided by the forcing current, and the Kelvin resistance of the contact with the resistive contact characteristics is measured by the current value applied when measuring the chain resistance. It features.
    The present invention made as described above is based on the Kelvin resistance value by extracting each component of the chain resistance according to the contact resistance region state and measuring the Kelvin resistance measurement condition in the contact having the resistivity contact characteristic with the current value applied when measuring the chain resistance. The chain resistance can be corrected.
    Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In addition, this embodiment is not intended to limit the scope of the present invention, but is presented by way of example only.
    1 is a view showing a Kelvin test pattern for measuring contact resistance of a semiconductor device.
    As shown here, the Kelvin test pattern has a contact formed between the lower conductive layer and the upper conductive layer.
    If this is represented by an equivalent circuit, it can be comprised as FIG.
    That is, R1 is the sheet resistance of the upper conductive layer 30, R4 is the sheet resistance of the lower conductive layer 10, R2 is the resistance filling the contact 20 portion, and R3 is the resistance of the contact surface 20 boundary. Point.
    In this way, the constituents are R1 and R4 values composed of R2 resistance filling the contact 20 portion, R3 resistance of the contact 20 interface, and sheet resistance of the upper conductive layer 30 and the lower conductive layer 20 filling the contact hole. Consists of
    The R1 value is obtained by dividing (V1-V2) by the force current I1 when the upper contact is not broken, that is, V1-V2.
    Then, when the upper contact is broken, that is, when V1 >> V2, (V1-V2) is obtained by dividing by the ground current I3.
    R4 is obtained by dividing V4 by I3, which is the ground current.
    Kelvin resistance, on the other hand, is represented by the sum of R2, which is the site resistance filling the contact 20, and R3, which is the resistance of the contact 20 interface. That is, when the contact 20 is not open, that is, if V2 is significantly larger than V4, the Kelvin resistance R2 + R3 is ABS (V2-V4) / I1 and the lower conductive layer 10 at the voltage V2 applied to the upper conductive layer. The value obtained by subtracting the voltage V4 applied by) is divided by the forcing current. However, when the contact 20 is opened, the Kelvin resistance R2 + R3 is ABS (V2-V4) / I3, which is obtained by subtracting the voltage V4 applied to the lower conductive layer 10 from the voltage V2 applied to the upper conductive layer 30. Obtain by dividing by current. If it is not divided by the ground current, the resistance may come out low even though it is actually high.
    When disassembling the components as above, the most important thing is the applied current level in the condition of measuring the Kelvin resistance in all the contacts including the contacts showing the resistive contact characteristics. The applied current must be measured at the current level flowing when measuring the chain resistance in the chain resistor so that the chain resistance value can be represented.
    The above conditions are indispensable in the contacts showing the resistive contact characteristics, because the Kelvin resistance must be obtained at the applied current level in the resistive contact characteristic, but it can represent the chain resistance value.
    3 is a view showing a chain resistance measurement pattern for measuring contact resistance of a semiconductor device.
    As shown here, the upper conductive layer 30 and the lower conductive layer 10 and the contacts 20 connected thereto represent a test pattern in which they are chained together.
    In other words, this is equivalent to the circuit shown in FIG.
    Thus, the chain resistance is 2 (R1 + R2 + R3) + R4 and this value can be obtained as V1 / I1 / 800 when the chain resistance is composed of 800 units. If R1 and R4 are markedly small at this time, the chain resistance is equal to the value of 2 x Kelvin.
    Thus, analyzing the Kelvin resistance component allows analyzing the chain resistance of the resistive contact characteristic.
    Chain resistance is generally measured at the operating voltage, which is currently measured at 3.3 V. In general, the operating voltage is applied between both ends of the chain of 800 units to calculate the voltage divided by the current.
    5 is a graph showing a current-voltage curve of a normal chain resistance.
    As shown here, the current level flowing in a normal contact of 0.4x0.45um is the power level.
    6 is a graph showing current-voltage curves measured by Kelvin patterns on wafers under the same conditions.
    As shown here, (A) is a graph of current-voltage measurement in a 0.4 × 0.45um Kelvin pattern, and it can be seen that the Kelvin resistance value changes with a constant slope regardless of the current applied from 0 to 20 mA. However, (b) is measured under the same conditions as (a) and shows the phenomenon that the Kelvin resistance value changes according to the applied current.
    Therefore, in the former, the Kelvin resistance may represent the chain resistance at any applied current, but in the latter case, the Kelvin resistance should be measured at the current level flowing when measuring the chain resistance with the applied current.
    And (C) shows that Kelvin resistance is very low when actually measuring Kelvin resistance at 5mA as it is now, but Kelvin resistance is very high when measured at the actual level. Also in this case, the chain resistance is approximated by approximately 2 x Kelvin resistance.
    Therefore, in the case of showing the resistive contact characteristic, the Kelvin resistance must be measured from the current flowing when the chain resistance value is measured, but the Kelvin resistance value can represent the chain resistance value.
    As described above, the present invention disassembles and correlates the chain resistance component and the Kelvin resistance component to analyze the chain resistance defect so that the cause of the resistance in the contact chain can be analyzed and traced through the contact resistance analysis in the Kelvin test pattern. Therefore, the component resistance component can be measured correctly in the Kelvin test pattern, and in particular, there is an advantage that the contact failure can be analyzed in the resistive contact.
    权利要求:
    Claims (1)
    [1" claim-type="Currently amended] In the contact resistance measurement method of a semiconductor device for measuring the chain resistance component using a Kelvin test pattern,
    When calculating the Kelvin resistance, if the contact resistance is opened, the voltage drop is divided by the ground current. If the contact resistance is not opened, the voltage drop is divided by the forcing current. The Kelvin resistance of a contact is measured by the value of the current applied when measuring the chain resistance.
    Method for measuring contact resistance of a semiconductor device, characterized in that.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1998-10-29|Application filed by 김영환, 현대전자산업 주식회사
    1998-10-29|Priority to KR1019980045842A
    2000-05-15|Publication of KR20000027812A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019980045842A|KR20000027812A|1998-10-29|1998-10-29|Method of measuring contact resistance of semiconductor device|
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